Ultra-dense embedded memory technology made available on specialized logic process
SUNNYVALE, CA (April 23, 2001) – MoSys, Inc. announced today that it has completed silicon verification of its ultra-dense 1T-SRAM memory technology on TSMC’s EmbFlashÔ process. System-on-Chip (SoC) designers requiring non-volatile memory can now integrate Megabytes of SRAM onto their designs.
“MoSys is delivering the advantages of 1T-SRAM to EmbFlashÔ users enabling a new set of consumer SoC applications.” commented Mark-Eric Jones, MoSys’ vice president and general manager of intellectual property. “These high-volume applications particularly benefit from the improved cost, yield and manufacturability of this technology”.
MoSys’ 1T-SRAM memory has already been silicon-proven across five generations of standard logic processes. Silicon validation of 1T-SRAM memory on TSMC’s 0.25-micron embedded Flash process continues to highlight the portability of this patented technology as MoSys extends its range of intellectual property products.
MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory technologies. The single transistor bit cell used in 1T-SRAM technology achieves much higher density than traditional four or six transistor SRAMs while using standard logic manufacturing processes.
No changes are required to standard logic processes when implementing the 1T-SRAM embedded memory. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs.
1T-SRAM technology is in high volume production in SoC products from MoSys’ licensees. The high density of 1T-SRAM memory results in dramatic silicon area savings and manufacturing yields that are much higher than traditional six transistor memories. The high yield is further enhanced by built-in redundancy.
Founded in 1991, MoSys develops, licenses and markets innovative memory technology for semiconductors. MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory technologies.
MoSys provides 1T-SRAMtechnology as licensable intellectual property to designers who want to efficiently embed large memories in their System on Chip (SoC) designs and also as stand-alone memory devices shipped in volume by MoSys. Licensees that are adopting 1T-SRAM technology include tier one electronics, semiconductor and foundry companies.
MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’ website at http://www.mosys.com.
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