SUNNYVALE, Calif., Nov. 4 /PRNewswire-FirstCall/ — MoSys, Inc.
(Nasdaq: MOSY), the industry’s leading provider of high density SoC embedded
memory solutions, today announced that Dr. Fu-Chieh Hsu, President and Chief
Executive Officer, and Mark Voll, Vice President of Finance and Administration
and Chief Financial Officer, will be presenting at The AEA Classic Financial
Conference at the Hyatt Regency Hotel in Monterey, California on November 9
and 10 in room #1459. Dr. Hsu and Mr. Voll will be addressing key technology
investors regarding the Company’s operations and technology.
This presentation is being webcast live by CCBN on November 10 at
12:00 P.M. P.T. and can be accessed at MoSys web site at www.mosys.com. A
replay will be available approximately 1 hour after the end of the
The webcast is also being distributed over CCBN’s Investor Distribution
Network to both institutional and individual investors. Individual investors
can listen to the call through CCBN’s individual investor center at
www.fulldisclosure.com or by visiting any of the investor sites in CCBN’s
Individual Investor Network. Institutional investors can access the call via
CCBN’s password-protected event management site, StreetEvents
Founded in 1991, MoSys, develops, licenses and markets innovative memory
technologies for semiconductors. MoSys’ patented 1T-SRAM technologies offer a
combination of high density, low power consumption, high speed and low cost
unmatched by other available memory technologies. The single transistor bit
cell used in 1T-SRAM memory results in the technology achieving much higher
density than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also offer the
familiar, refresh-free interface and high performance for random address
access cycles associated with traditional SRAMs. In addition, these
technologies can reduce operating power consumption by a factor of four
compared with traditional SRAM technology, contributing to making them ideal
for embedding large memories in System on Chip (SoC) designs. MoSys’ licensees
have shipped more than 65 million chips incorporating 1T-SRAM embedded memory
technologies, demonstrating excellent manufacturability in a wide range of
silicon processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on MoSys’
website at http://www.mosys.com.
NOTE: 1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. Nintendo GameCube is a trademark of Nintendo. All other
trade, product, or service names referenced in this release may be trademarks
or registered trademarks of their respective holders.
SOURCE Monolithic System Technology, Inc.
CONTACT: Mark Voll, CFO of MoSys, +1-408-731-1846
Web site: http://www.mosys.com