SUNNYVALE, Calif.–(BUSINESS WIRE)–Jan. 4, 2006–MoSys, Inc.
(Nasdaq:MOSY), the industry’s leading provider of high-density
system-on-chip (SoC) embedded memory solutions, today announced that
Chet Silvestri, Chief Executive Officer, will be presenting at The
Eighth Annual Needham Growth Conference at the New York Palace Hotel
on Wednesday, January 11, 2006 at 3:30 p.m. EST. Mr. Silvestri will be
addressing key technology investors regarding the Company’s operations
and technology.

A live audio Webcast of the presentation may be accessed on the
MoSys website at http://www.mosys.com. A replay will be available
approximately 10 minutes after the end of the presentation.

About MoSys, Inc.

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
98 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085. More information is available on
MoSys’ website at http://www.mosys.com.

Note for Editors:

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: MoSys, Sunnyvale
Chet Silvestri, 408-731-1811
chet@mosys.com
or
Shelton Investor Relations, Dallas
Investor Relations
Beverly Twing, 972-239-5119 x 126
btwing@sheltongroup.com

SOURCE: MoSys, Inc.