SUNNYVALE, Calif.–(BUSINESS WIRE)–July 30, 2003–MoSys, Inc.
(Nasdaq:MOSY) the industry’s leading provider of high density SoC
embedded memory solutions will be presenting at Adams, Harkness &
Hill’s 23rd Annual Summer Seminar in Boston on August 6, 2003 at the
Marriott Long Wharf Hotel. Dr. Fu-Chieh Hsu, President and Chief
Executive Officer and Mark Voll, Vice President of Finance and Chief
Financial Officer will be presenting an overview of the Company’s
operations and technology beginning at 10:30 a.m.
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs, while using the same
standard logic manufacturing processes.1T-SRAM technologies also offer
the familiar, refresh-free interface and high performance for random
address access cycles associated with traditional SRAMs. In addition,
these technologies can reduce operating power consumption by a factor
of four compared with traditional SRAM technology, contributing to
making it ideal for embedding large memories in System on Chip (SoC)
designs. MoSys’ licensees have shipped more than 50 million chips
incorporating 1T-SRAM embedded memory, demonstrating the excellent
manufacturability of the technology in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at http://www.mosys.com.
Note for Editors:
1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.