SUNNYVALE, Calif.–(BUSINESS WIRE)–May 5, 2004–Monolithic System
Technology, Inc. (MoSys), (NASDAQ:MOSY) will release its first quarter
2004 results for the period ending March 31, 2004 on Thursday, May 6,
2004, after the market closes. Following the release, the Company will
host a live audio Web cast and conference call at 5:15 p.m. Eastern
Time.

This call is being webcast by CCBN and can be accessed at MoSys’
web site at www.mosys.com.

The webcast is also being distributed over CCBN’s Investor
Distribution Network to both institutional and individual investors.
Individual investors can listen to the call through CCBN’s individual
investor center at www.companyboardroom.com or by visiting any of the
investor sites in CCBN’s Individual Investor Network. Institutional
investors can access the call via CCBN’s password-protected event
management site, StreetEvents (www.streetevents.com).

ABOUT MOSYS AND 1T-SRAM

Founded in 1991, MoSys (NASDAQ:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making it ideal for embedding large memories in System
on Chip (SoC) designs. MoSys’ licensees have shipped more than 50
million chips incorporating 1T-SRAM embedded memory, demonstrating
excellent manufacturability of the technology in a wide range of
silicon processes and applications. MoSys is headquartered at 1020
Stewart Drive, Sunnyvale, California 94085. More information is
available on MoSys’ website at https://dev-mosys-web-04-19.pantheonsite.io.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: Shelton IR
Beverly Twing, 972-239-5119 ext. 126
btwing@sheltongroup.com

SOURCE: Monolithic System Technology, Inc.