SUNNYVALE, Calif., Apr 29, 2005 (BUSINESS WIRE) — Monolithic System Technology, Inc. (MoSys),
(Nasdaq:MOSY) the industry’s leading provider of high density SoC
embedded memory solutions, announced today that on April 25, 2005 its
board of directors renewed an outstanding authorization for the
Company to repurchase its common stock. The board of directors’ prior
authorization for the Company to purchase up to $25 million of the
Company’s common stock expired on April 19, 2005. The new
authorization allows for the repurchase of up to $20 million of the
Company’s common stock over the next twelve months. The share
repurchases may be made, from time to time in the open market subject
to market conditions and other factors, including self-imposed
black-out periods during which the Company and its insiders are
prohibited from trading in the Company’s common stock. While blackout
periods typically occur towards the end of a fiscal quarter in
anticipation of the public release of quarterly earnings, the Company
may impose a blackout period at any time without advance public

These repurchases may be commenced or suspended at any time or
from time to time without prior notice. During 2004, the Company
repurchased 1,182,100 shares of its common stock at an average price
of $3.94 per share. As of December 31, 2004, the company had
approximately 30 million shares of common stock outstanding and also
had cash, cash equivalents and short and long-term investments of $86


Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
80 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, Calif. 94085. More information is available on
MoSys’ website at


This press release may contain forward-looking statements about
the Company including, without limitation, benefits and performance
expected from use of the Company’s 1T-SRAM technology.

Forward-looking statements are based on certain assumptions and
expectations of future events that are subject to risks and
uncertainties. Actual results and trends may differ materially from
historical results or those projected in any such forward-looking
statements depending on a variety of factors. These factors include
but are not limited to, customer acceptance of our 1T-SRAM
technologies, the timing and nature of customer requests for our
services under existing license agreements, the timing of customer
acceptance of our work under such agreements, the level of commercial
success of licensees’ products such as cell phone hand sets, ease of
manufacturing and yields of devices incorporating our 1T-SRAM, our
ability to enhance the 1T-SRAM technology or develop new technologies,
the level of intellectual property protection provided by our patents,
the vigor and growth of markets served by our licensees and customers
and operations of the Company and other risks identified in the
Company’s most recent annual report on Form 10-K filed with the
Securities and Exchange Commission, as well as other reports that
MoSys files from time to time with the Securities and Exchange
Commission. MoSys undertakes no obligation to update publicly any
forward-looking statement for any reason, except as required by law,
even as new information becomes available or other events occur in the


MoSys, Sunnyvale
Mark Voll, 408-731-1846
Shelton IR
Beverly Twing, 972-239-5119 x126