SUNNYVALE, Calif.–(BUSINESS WIRE)–Dec. 19, 2005–MoSys, Inc.
(Nasdaq:MOSY), the industry’s leading provider of high-density
system-on-chip (SoC) embedded memory solutions announced today that
Monte Crawford has joined MoSys in the position of Chief Corporate
Counsel. Monte’s responsibilities will include directing the MoSys
licensing program, managing general corporate governance, and other
commercial legal matters.

Monte brings to MoSys more than 10 years of legal experience in
the semiconductor, systems and service industries at companies
including Compaq Computers (now HP) and SBC Communications. He has
extensive experience in contract management, Intellectual Property
(IP) licensing and portfolio management, Sarbanes-Oxley Compliance,
and Mergers and Acquisitions. Most recently he was at LSI Logic
Corporation where he was the Senior Corporate Counsel for the
Commercial Law Group.

“MoSys’ expanding business and extensive intellectual property
portfolio demanded a full time internal corporate counsel and Monte is
the perfect fit for that function,” mentioned Chet Silvestri, Chief
Executive Officer of MoSys. “MoSys has a long successful track record
of designing and developing some of the world’s most advanced memory
technologies, and the addition of Monte to our team strengthens our
efforts in recognizing and defending the many contributions made by
our engineering team to the semiconductor intellectual property
industry.”

“I am very excited with the opportunity of joining MoSys and its
legendary team of technology innovators,” expressed Monte Crawford.
“MoSys’ 1T-SRAM(R) technology is a very valuable asset and protecting
it is a challenge that I will face with all my energy.”

About Mosys, Inc.

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
98 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085. More information is available on
MoSys’ website at http://www.mosys.com.