SUNNYVALE, Calif., Mar 24, 2006 (BUSINESS WIRE) — MoSys, Inc. (NASDAQ: MOSY), the industry’s leading
provider of high-density system-on-chip (SoC) embedded memory
solutions announced today the appointment of Jim Pekarsky as its Vice
President of Finance and Chief Financial Officer (CFO). Mr. Pekarsky
will be responsible for all financial and administrative aspects of
the company and will report directly to Chet Silvestri, MoSys’ Chief
Executive Officer.

Mr. Pekarsky brings to MoSys more than 25 years of experience. He
joins MoSys from AccelChip where he was the CFO since November 2003
and through their acquisition by Xilinx (Nasdaq: XLNX). Prior to
joining AccelChip he served as CFO of Virage Logic (Nasdaq: VIRL) for
5 years and led the Company’s Initial Public Offering in August 2000.
Prior positions included Director and General Manager at Mentor
Graphics (Nasdaq: MENT), including its Emulation Division in Paris,
France, and Embedded Software Division in San Jose, California.
Pekarsky received a bachelor of science in Accounting from Indiana
University of Pennsylvania and an MBA in Finance from Golden Gate

“Jim is a seasoned financial executive with extensive public and
private company experience in the semiconductor Intellectual Property
(IP) industry,” expressed Silvestri. “We are pleased that he has
agreed to join our team and help drive the growth of our business.”

Mr. Pekarsky was granted a stock option to purchase 300,000 shares
of MoSys’ common stock at an exercise price of $7.97, equal to MoSys’
closing price on March 20, 2006 as a new employee hiring inducement.
This option has not been granted under the company’s Amended and
Restated 2000 Stock Option and Equity Incentive Plan.

“I’m excited about the opportunity to join MoSys as the Chief
Financial Officer,” Mr. Pekarsky said. “I believe that MoSys’ strong
financial position combined with its technological innovation and
industry leadership in delivering high-density embedded memories will
enable the company to continue on a fast growth path.”


Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
100 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085. More information is available on
MoSys’ website at

SOURCE: MoSys, Inc

MoSys, Inc
Walter Croce, 408-731-1820
Shelton IR
Beverly Twing, 972-239-5119 x126