SUNNYVALE, Calif.–(BUSINESS WIRE)–Nov. 15, 2005–Monolithic
System Technology, Inc. (MoSys), (NASDAQ:MOSY), the industry’s leading
provider of high-density system-on-chip (SoC) embedded memory, today
announced that effective today Mark Voll, the company’s vice president
of finance and administration and chief financial officer, is leaving
MoSys to pursue another career opportunity. MoSys’ seasoned financial
staff and executive team will assume Voll’s existing responsibilities
until the company hires a new CFO.

Mark Voll commented, “I have truly enjoyed working at MoSys and
continue to be a strong advocate of the company and its technology.
While this decision was difficult, I believe the change offers a
personal opportunity to further expand my career and expertise. Over
the past year, MoSys has made several positive changes, including the
addition of new management and Board members, who I believe will be
instrumental in leading MoSys to growth and profitability.”

Chet Silvestri, MoSys’ chief executive officer, stated, “Mark has
been integral to the development and growth of MoSys during his
cumulative five years at the company. As CFO, and interim CEO prior to
my joining MoSys, he successfully guided MoSys through its most recent
challenges while building a strong finance staff in order to maintain
the necessary internal business controls and to implement the numerous
regulatory controls mandated by the SEC. We are currently conducting a
search for a qualified candidate to fill the role of CFO. In the
interim, I will oversee the finance and accounting functions and will
work with the existing finance staff to continue to meet the business
and regulatory requirements. We appreciate Mark’s significant
contributions to MoSys and wish him well in his future endeavors.”

MoSys also announced that Hem Hingarh has joined the company as
vice president of engineering and will report to Wingyu Leung,
executive vice president and chief technical officer. Hem brings over
30 years of executive management experience in engineering and product
line management to MoSys. Prior to joining MoSys, Hem was vice
president of engineering at Hellosoft, Inc., an IP licensor of
embedded system software for convergence mobile platforms. Prior to
Hellosoft, he was senior vice president of engineering at Silicon
Access Networks, developers of 10GE/OC-192 networking router chip set
and EDRAM technology. Hem was also senior director of engineering at
Sun Microsystems, product line director at National Semiconductor, and
was involved in many key technology developments at Fairchild Research
Center. He earned his bachelor’s degree in Electrical Engineering from
the BITS Pilani, India and a master’s degree in Electrical Engineering
from the University of California at Berkeley.

“We remain focused on the growth and expansion of our business
through the identification of leading talent for our sales
organization and engineering staff, and we are pleased to have Hem
join our team,” added Silvestri. “Hem will work with our engineering
staff to help ensure timely availability of our extensive 1T-SRAM(R)
product roadmap and will help share the management load so that Wingyu
can devote additional time and resources to the development of future
product offerings that will broaden our technology portfolio and solve
the high-density SoC memory challenges faced by our customers. Also as
part of our expansion, last month we announced the hiring of Dhaval
Ajmera as vice president of worldwide sales and business development,
who has over 23 years of experience from AMD, National Semiconductor,
Sun Microsystems and CEVA.”

Mr. Silvestri concluded, “I am enthusiastic about the market
opportunities and growth potential of our company and believe our
current organization and momentum will support further progress
towards profitability and increased value for our stockholders.”

ABOUT MOSYS, INC.

Founded in 1991, MoSys (NASDAQ:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional six transistor SRAMs while using the same standard
logic manufacturing processes. 1T-SRAM technologies also offer the
familiar, refresh-free interface and high performance for random
address access cycles associated with traditional SRAMs. In addition,
these technologies can reduce operating power consumption by a factor
of four compared with traditional SRAM technology, contributing to
making them ideal for embedding large memories in System on Chip (SoC)
designs. MoSys’ licensees have shipped more than 98 million chips
incorporating 1T-SRAM embedded memory technologies, demonstrating
excellent manufacturability in a wide range of silicon processes and
applications. MoSys is headquartered at 755 N. Mathilda Avenue,
Sunnyvale, California 94085. More information is available on MoSys’
website at http://www.mosys.com.

FORWARD LOOKING STATEMENTS

This press release may contain forward-looking statements about
Monolithic System Technology, Inc., (“the Company”) including, without
limitation, benefits and performance expected from use of the
Company’s 1T-SRAM technology.

Forward-looking statements are based on certain assumptions and
expectations of future events that are subject to risks and
uncertainties. Actual results and trends may differ materially from
historical results or those projected in any such forward-looking
statements depending on a variety of factors. These factors include
but are not limited to, customer acceptance of our 1T-SRAM
technologies, the timing and nature of customer requests for our
services under existing license agreements, the timing of customer
acceptance of our work under such agreements, the level of commercial
success of licensees’ products such as cell phone hand sets, ease of
manufacturing and yields of devices incorporating our 1T-SRAM, our
ability to enhance the 1T-SRAM technology or develop new technologies,
the level of intellectual property protection provided by our patents,
the vigor and growth of markets served by our licensees and customers
and operations of the Company and other risks identified in the
Company’s most recent annual report on Form 10-K filed with the
Securities and Exchange Commission, as well as other reports that the
Company files from time to time with the Securities and Exchange
Commission. The Company undertakes no obligation to update publicly
any forward-looking statement for any reason, except as required by
law, even as new information becomes available or other events occur
in the future.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: Monolithic System Technology, Inc. (MoSys)
Chet Silvestri, 408-731-1800
chet@mosys.com
www.mosys.com
or
Shelton Investor Relations
Beverly Twing, 972-239-5119, Ext. 126
btwing@sheltongroup.com

SOURCE: Monolithic System Technology, Inc. (MoSys)