SUNNYVALE, Calif.–(BUSINESS WIRE)–Oct. 18, 2005–Monolithic
System Technology, Inc. (MoSys), (Nasdaq:MOSY) the industry’s leading
provider of high density SoC embedded memory solutions, announced
today that Dhaval Ajmera has joined MoSys in the position of vice
president of worldwide sales and business development. Dhaval’s
responsibilities will include the licensing of MoSys’ embedded macro
technology, the launch and execution of the company’s patent licensing
program, 3rd-party partnerships and merger and acquisitions
activities.

Dhaval brings to MoSys more than 23 years executive management
experience in engineering, sales, marketing and business development
at companies including AMD, National Semiconductor, Sun Microsystems,
Emuzed and CEVA. He has extensive experience in technology licensing
and has successfully negotiated very large, complex licenses with
major companies. Most recently he was at CEVA where he was the vice
president of North American Sales and under his direction grew sales
significantly.

“I am confident that Dhaval will be a great addition to our
company,” said Chet Silvestri, CEO of MoSys. “Dhaval brings a wealth
of experience and measurable success to help us in achieving our short
and long term goals.”

“I am thrilled with the opportunity to join MoSys,” expressed
Dhaval Ajmera. “MoSys’ 1T-SRAM(R) technology is the only viable choice
for making high volume, cost effective SoCs, creating a paradigm shift
in the marketplace.”

About MoSys, Inc.

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
98 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085. More information is available on
MoSys’ website at http://www.mosys.com.