1T-SRAM memory to be embedded in communications ICs

SUNNYVALE, CALIFORNIA (April 12, 2002) – MoSys, Inc., the industry’s leading provider of high density SoC embedded memory solutions (NASDAQ:MOSY) today announced that Matsushita Communication Industrial Co., Ltd. (NYSE: MC) has licensed MoSys’ 1T-SRAMÒ technology to implement ultra-dense high performance memory in future communications IC products. Matsushita Communication Industrial Co., Ltd. is a principal subsidiary of Matsushita Electric Industrial Co., Ltd., and specializes in three business areas: mobile communications, automotive multimedia, and system solutions.

“I am impressed to see the growing number of tier one companies that have been adopting MoSys’ 1T-SRAM embedded memory technology for their future product designs in the important consumer and communications market segments”, commented Sherry Garber, senior vice president at Semico Research “As memory proportion continues to increase beyond half of the die area on SoC products, one of the most important decisions for designers is selection of the best embedded memory technology to optimize the cost and quality of their products.”

MoSys’ 1T-SRAM embedded memory technology is licensed to leading consumer and communications customers for incorporation in their IC products requiring high density embedded memory. MoSys’ licensees have already shipped more than 20 million ICs incorporating a total of over one billion megabits (1,000,000,000,000,000 bits) of 1T-SRAM embedded memory. Using a standard logic process, 1T-SRAM memory delivers licensees the performance and convenience of SRAM with additional cost and power consumption advantages.

“As the industry continues to embed larger and larger quantities of high-performance memory on SoC designs, 1T-SRAM enables customers to reach new levels of performance, quality and cost that cannot be achieved with other embedded memory technologies” noted Mark-Eric Jones, vice president and general manager of intellectual property at MoSys, Inc. “We are pleased to provide MCI with our 1T-SRAM technology as they build the ICs supporting the next generation of communications applications”.


Founded in 1991, MoSys develops, licenses and markets innovative memory technology for semiconductors. MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System-on-Chip (SoC) designs. 1T-SRAM technology is in volume production both in SoC products at MoSys’ licensees as well as in MoSys’ standalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’ website at www.mosys.com.

Note for Editors:

1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trademarks or registered trademarks are the property of their respective owners.