Ultra-dense 1T-SRAM production successes anchor new agreement
SUNNYVALE, CA (April 9, 2001) – MoSys, Inc. announced today that Galileo Technology, a division of Marvell, has extended its licensing agreement with MoSys to include 1T-SRAM technology on additional advanced CMOS standard logic processes.
MoSys has developed a technology relationship with Galileo, supplying it with its innovative ultra-dense embedded memory for use on Galileo’s communications ICs.
“Over the past two years, Galileo has had a successful relationship with MoSys, and, to date, we have shipped, in volume, multiple products incorporating MoSys’ 1T-SRAM memories,” stated Gary Smerdon, vice president of marketing for Galileo’s Switching Products Business Unit.
“MoSys’ memory technology plays an important part in our ability to offer customers higher system-level integration solutions.”
With 1T-SRAM memory, designers can incorporate multi-megabits of RAM in their system-on-chip (SoC) designs, for fabrication on a completely standard CMOS logic process.
By integrating all the memory on its chips, Galileo’s customers in the voice / video / data markets gain significant price-performance benefits.
“Galileo’s leadership in communication markets is delivering to its customers very cost-effective solutions”, noted Mark-Eric Jones, vice president and general manager of intellectual property at MoSys. “We are very pleased that Galileo has further extended its relationship with MoSys to include licensing of 1T-SRAM technology on additional processes”.
MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs whilst the innovative 1T-SRAM architecture allows the use of standard logic manufacturing processes without requiring any process changes.
1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs.
1T-SRAM technology is in volume production both in discrete memories available from MoSys as well as in SoC products at MoSys licensees.
Founded in 1991, MoSys develops, licenses and markets innovative memory technology for semiconductors. MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory technologies.
MoSys provides 1T-SRAM technology as licensable intellectual property to designers who want to efficiently embed large memories in their System on Chip (SoC) designs and also as stand-alone memory devices shipped in volume by MoSys. Licensees that are adopting 1T-SRAM technology include tier one electronics, semiconductor and foundry companies. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’ website at http://www.mosys.com.
Note for Editors:
1T-SRAM is a trademark of MoSys,
Inc. All other trademarks or registered trademarks are the property
of their respective owners.