1T-SRAM technology to enable ultra-dense memories on standard
logic processes

SUNNYVALE, CA (March 27, 2000)— Continuing the momentum
for 1T-SRAM memory technology, MoSys, Inc. announced today that
LSI Logic has licensed MoSys’ 1T-SRAM memory technology for use
in their fast growth communications ASIC and ASSP businesses. The
1T-SRAM technology allows economical integration of megabits of
RAM in system-on-chip (SoC) designs on standard logic processes.

“LSI Logic continues to provide enabling technologies and
CoreWareâ products to support the
requirements of the high growth communication market. A growing
demand for the communication market is the integration of CoreWareâ
library elements with multi-megabits of high performance memories
in a single silicon process. MoSys’ 1T-SRAM technology provides
a solution for that multi-megabits memory integration.” commented
Jordan Plofsky, Vice President and General Manager of LSI’s Networking
Product Division.

A competitive advantage of the MoSys’ 1T-SRAM architecture is that
it does not require an additional embedded DRAM process technology.
Traditional embedded DRAM process technologies require additional
manufacturing steps and have had lower yields than pure logic process
technologies making them more complex and expensive. MoSys’ capability
of supporting the 1T-SRAM design on a pure logic process allows
LSI Logic to integrate multi-megabit memories in a SoC without having
to recharacterize and requalify their large CoreWareâ
portfolio in a different process technology. This solution provides
the communication customer the most economical and fastest time
to market solution.

Mark-Eric Jones, vice president and general manager of intellectual
property at MoSys, Inc. remarked, “This technology enables
LSI Logic, recognized as a leader in SoC integration, to economically
incorporate the very large quantities of high performance memory
now required by SoCs in communications and consumer markets.”


Available in densities up to 128Mbits, MoSys’ patented 1T-SRAM
technology uses a single transistor cell to achieve its exceptional
density while maintaining the refresh-free interface and low latency
random memory access cycle time associated with traditional six-transistor
SRAM cells. Embedded 1T-SRAM memories allow designers to get beyond
the density limits of six-transistor SRAMs; it also reduces much
of the circuit complexity and extra cost associated with using embedded
DRAM. In addition to the exceptional performance and density, this
technology offers dramatic power consumption savings by using under
a quarter of the power of traditional SRAM memories. 1T-SRAM technology
is volume production proven in millions of MoSys’ iscrete memory


MoSys, Inc. is the leading semiconductor technology company specializing
in innovative, high performance, random access memories based on
its patented 1T-SRAM architecture. Founded in 1991, the company
develops innovative memory technology for licensing to semiconductor
and systems companies. MoSys also uses this technology to produce
its own memory products. The company¹s unique memory architecture
has been proven in the volume production of over 30 million memory
devices. Licensees that are adopting 1T-SRAM technology include
tier one electronics, semiconductor and foundry companies. The company
is headquartered at 1020 Stewart Drive, Sunnyvale, California, 94086.
More information on MoSys is available at http://www.mosys.com.


Note for Editors:

1T-SRAM is a trademark of MoSys, Inc. All other trademarks
or registered trademarks are the property of their respective owners.