SUNNYVALE, Calif., June 24 /PRNewswire-FirstCall/ — MoSys, Inc.,
(Nasdaq: MOSY), a leading provider of high-density system-on-chip (SoC) memory
and analog/mixed-signal intellectual property (IP), today announced that LG
Electronics is shipping the world’s first mobile handset using the MoSys
1T-SRAM Dual-Port memory technology. The MoSys technology is an
application-specific implementation of its industry-leading 1T-SRAM(R) memory
IP for the cellular phone market. The MoSys 1T-SRAM Dual-Port Display macros
have been designed specifically for mobile handset applications, such as those
included in the LG Electronics AMOLED-based display.
The MoSys 1T-SRAM Dual-Port Display macro is used as the display buffer
memory mounted on the display (chip-on-glass) or on the connecting cable
(chip-on-film or tape carrier package). By keeping the display buffer memory
on the display itself, LG Electronics should reduce the challenges inherent in
electromagnetic interference (EMI), while cutting overall display power
consumption. In the LG handset, the buffer memory must conform to unusual area
and form factor requirements of the AMOLED display, which is easily
accomplished using the MoSys 1T-SRAM technology.
Compatible with high-volume processes at major foundries and integrated
device manufacturers, the MoSys 1T-SRAM Dual-Port Display macro uses standard
foundry process technologies and offers a reduction in overall silicon area of
up to 70 percent when compared to conventional embedded memory solutions.
Said Len Perham, MoSys’ President and Chief Executive Officer, Our
customers continue to innovate using the core MoSys 1T-SRAM technology, which
enables new and exciting mobile consumer applications. We are seeing strong
customer interest in our new MoSys Dual-Port Display macro, which is the first
application-optimized memory built on our technology platform. We are pleased
to have a leader like LG Electronics provide the first commercial
implementation of that technology.
ABOUT MOSYS, INC.
Founded in 1991, MoSys (NASDAQ: MOSY), develops, markets and licenses
innovative embedded memory and analog/mixed-signal intellectual property (IP)
technologies for advanced SoCs used in a variety of home entertainment, mobile
consumer, networking and storage applications. MoSys’ patented 1T-SRAM and 1T-
FLASH technologies offer a combination of high density, low power consumption,
high speed and low cost unmatched by other available memory technologies.
MoSys’ advanced analog/mixed-signal technologies include highly integrated
Blu-ray DVD, Gigabit Ethernet, Serial ATA, and a range of high speed phase
lock loop and analog-to-digital converter IP. MoSys’ embedded memory IP has
been included in more than 140 million devices demonstrating silicon-proven
manufacturability in a wide range of processes and applications. MoSys is
headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More
information is available on MoSys’ website at http://www.mosys.com.
MoSys and 1T-SRAM are registered trademarks of MoSys, Inc. 1T-FLASH(TM) is
a trademark of MoSys, Inc.
+1 (408) 731-1832
Sr. Acct. Manager
972-239-5119 ext. 126
SOURCE MoSys, Inc.
CONTACT: Sally Pedreiro of MoSys, Inc., +1-408-731-1832,
email@example.com; or Beverly Twing, Sr. Acct. Manager of Shelton Group,
+1-972-239-5119, ext. 126, firstname.lastname@example.org, for MoSys, Inc.
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