Technology to be used initially in high-volume DVD products

SUNNYVALE, CALIFORNIA (April 10, 2002) –MoSys, Inc. (NASDAQ: MOSY) the industry’s leading provider of high density SoC embedded memory solutions today announced the licensing of MoSys’ advanced 1T-SRAMÒ embedded memory technology to be used in LG Electronics’ DVD products incorporating high performance, high density embedded memory blocks.

“We selected MoSys 1T-SRAM memory technology for its track record of production-proven performance, quality and cost advantages that are not matched by other embedded memory technologies,” said Heesub Lee, vice president of engineering at LG Electronics. “Using MoSys’ 1T-SRAM embedded memory helps LG Electronics maintain its performance, quality and cost advantages in our consumer products.”

In 2001, sales* of DVD players increased by over 30% making this a very important high-growth consumer electronics market. MoSys 1T-SRAM embedded memory technology has been licensed to many leading consumer and communications companies who have now shipped over 20 million chips across four generations of manufacturing processes incorporating a total of over one billion megabits (1,000,000,000,000,000 bits) of the patented memory technology.

“LG Electronics has tremendous strength in high-volume consumer electronics products,” noted Mark-Eric Jones, vice president and general manager of intellectual property at MoSys. “We are very pleased that LG has chosen MoSys’ 1T-SRAM technology for use in their new DVD products.”


Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technology for semiconductors. MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technology is in volume production both in SoC products at MoSys’ licensees as well as in MoSys’ standalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’ website at

Note for Editors:

1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.

* Article in Semiconductor Business News 03/19/2002 quoting market statistics from iSuppli.