SUNNYVALE, Calif.–(BUSINESS WIRE)–Jan. 20, 2004–MoSys, Inc.,
(Nasdaq:MOSY) the industry’s leading provider of high density SoC
embedded memory solutions, announced today that Lantronix(R), Inc., a
leading provider of network connectivity and device management
solutions, has begun producing chips containing MoSys’ 1T-SRAM(R)
embedded memory technology. Lantronix will be using the chips in a
wide range of solutions that allow virtually any device to be
accessed, monitored and managed over Ethernet networks.

“We selected MoSys’ 1T-SRAM embedded memory technology because it
offers higher performance at a lower cost while occupying less die
space than alternatives,” said Curt Brown, executive vice president of
research and development for Lantronix. “Our networking products
require the highest quality technology available at all levels of
production. MoSys delivers an innovative, high density memory solution
that allows the design of high-performance, cost-efficient SoCs to
drive Lantronix products.”

MoSys’ patented 1T-SRAM memory technology enables large amounts of
memory to be embedded into SoC designs using a standard logic process,
providing reliability and high performance crucial to Internet and
networking technology. The Lantronix chips that incorporate MoSys
technology will be used to provide network connectivity and device
management solutions for Lantronix’ diverse customer base.

“MoSys’ 1T-SRAM memory technology is ideal for any type of
high-performance networking solution for the numerous benefits it
affords users, including its efficient use of power and space,” said
Mark-Eric Jones, vice president and general manager of Intellectual
Property at MoSys. “We are delighted that Lantronix chose to license
MoSys’ memory technology and look forward to working with the company
on future generations of its advanced networking chips.”

ABOUT MOSYS

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs, while using the same
standard logic manufacturing processes.1T-SRAM technologies also offer
the familiar, refresh-free interface and high performance for random
address access cycles associated with traditional SRAMs. In addition,
these technologies can reduce operating power consumption by a factor
of four compared with traditional SRAM technology, contributing to
making it ideal for embedding large memories in System on Chip (SoC)
designs. MoSys’ licensees have shipped more than 50 million chips
incorporating 1T-SRAM embedded memory, demonstrating the excellent
manufacturability of the technology in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at http://www.mosys.com/.

Note for Editors:

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: MoSys, Inc., Sunnyvale
K.T. Boyle, 408-731-1830
kboyle@mosys.com
or
Shelton
Media Contact
Katie Olivier, 972-239-5119 x 142
kolivier@sheltongroup.com

SOURCE: MoSys, Inc.