K-Micro Customers Can Use MoSys’ Memory Technology for
High-Density, Low-Power ASICs

SAN JOSE, Calif.–(BUSINESS WIRE)–Nov. 29, 2004–
K-Micro (Kawasaki Microelectronics) a leader in advanced yet
affordable ASICs, and MoSys, Inc. (Nasdaq:MOSY) the industry’s leading
provider of high-density system on chip (SoC) embedded memory
solutions, today announced a licensing agreement that will add MoSys’
1T-SRAM(R) embedded memory technology to K-Micro’s ASIC intellectual
property (IP) portfolio.

“Adding MoSys’ 1T-SRAM technologies to our IP portfolio offers our
customers an excellent high-density and low power embedded memory
solution for SoCs for cost-sensitive products such as digital cameras,
set-top boxes, digital TVs, and fiber-to-the-premises (FTTP)
equipment,” said Sunil Baliga, vice president of marketing and
business development for K-Micro. “Our customers who want to use
MoSys’ 1T-SRAM technology can do so without having to negotiate a
license agreement with MoSys, thus making it easier for them to use it
and speeding up their time-to-market.”

“We are pleased to partner with K-Micro by including 1T-SRAM
technology in the K-Micro IP library. The addition of 1T-SRAM will
further K-Micro’s position as a leader in advanced yet affordable
ASICs,” commented Karen Lamar, vice president of sales and marketing
at MoSys.

“MoSys 1T-SRAM technologies have been silicon-proven in six
process generations and are in volume production in many consumer and
communications products. Our partnership with K-Micro expands the
growing list of leading semiconductor companies that have aligned with
MoSys to develop high-quality integrated circuits with proven benefits
in cost-sensitive product designs. We are pleased to partner with
K-Micro beginning with its 0.13-micron logic process and plan to
extend our relationship with them for future advanced process
generations,” added Gerry Shimauchi, MoSys’ Japan country manager.

About K-Micro (Kawasaki Microelectronics)

K-Micro is the leader in advanced yet affordable ASIC
semiconductor technology solutions. The company’s innovative core
technologies and world-class design support are used in the consumer
electronics, computer, office-automation, and networking markets. The
company is an active participant in industry standards organizations,
including the Wi-Fi Alliance, Network Processing Forum (NPF), Optical
Internetworking Forum (OIF), PCI Special Interest Group (PCI-SIG), USB
Implementers Forum, MPEG Industry Forum (MPEGIF), Mobile Computing
Promotion Consortium (MCPC), the Digital Display Working Group (DDWG),
SD Card Association (SDA) and OCP International Partnership (OCP-IP).
K-Micro has design centers in Boston, San Jose, Taipei, and Tokyo. For
more information, contact the company at 408-570-0555, or visit

About MoSys

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, 1T-SRAM technologies can reduce operating power consumption
by a factor of four compared with traditional SRAM technology,
contributing to making it an ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
80 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, Calif. 94085. More information is available on
MoSys’ website at https://dev-mosys-web-04-19.pantheonsite.io.

Note for Editors:

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

SOURCE: MoSys, Inc.