TOKYO & SUNNYVALE, Calif.–(BUSINESS WIRE)–Jan. 26, 2004–MoSys,
Inc. (NASDAQ:MOSY) the industry’s leading provider of high density
system-on-chip (SoC) embedded memory solutions, and Fujitsu Limited
(TSE:6702), a leading provider of customer-focused IT and
communications solutions for the global marketplace, today announced
an agreement under which MoSys’ innovative quad density 1T-SRAM-Q(TM)
technology is licensed to Fujitsu Limited for use on its 0.13-micron
logic process. Fujitsu will use MoSys’ 1T-SRAM-Q to provide
high-density embedded memory solutions for its SoC designs in consumer
applications, including digital cameras and video camcorders. Fujitsu
ranks as the largest Japanese ASIC vendor, attributable to its
successes in these markets.

“By leveraging the standard logic manufacturing process, MoSys
1T-SRAM-Q memory technology is ideal for use in ASIC development, as
well as SoCs for processors and reconfigurable logic. We selected
MoSys’ memory technology over eDRAM because of the advantages in
manufacturability, performance and cost structure,” said Shigeru
Fujii, corporate vice president and group executive vice president,
LSI Group at Fujitsu Limited. “By partnering with MoSys we expect to
offer leading-edge embedded memory solutions not only on our current
0.13-micron logic process, but also on our upcoming further advanced

“By adopting a technology license for our 1T-SRAM-Q memory,
Fujitsu can use its extensive experience in memory technology to
provide optimized solutions for its own and its ASIC customers’
designs,” commented Mark-Eric Jones, vice president and general
manager of Intellectual Property at MoSys, Inc. “MoSys is very pleased
that Fujitsu has chosen 1T-SRAM-Q to satisfy its needs for high
density embedded memory as memory continues to increase in importance
within ASIC designs.”

“We are very pleased to partner with Fujitsu to make our 1T-SRAM-Q
memory technology available to a large number of customers through its
strong sales, marketing and manufacturing capabilities,” added Gerry
Shimauchi, MoSys’ Japan country manager.


1T-SRAM-Q achieves its exceptional density by using bit cells of
just 0.5 micron2 in the 0.13-micron logic process. Using only one
additional, non-critical mask on the standard logic process, 1T-SRAM-Q
enables cost-effective integration of large amounts of embedded memory
on SoC designs without any change to the other logic IP blocks or
libraries. 1T-SRAM-Q incorporates MoSys’ proprietary Transparent Error
Correction(TM) (TEC(TM)) technology delivering the additional benefits
of improved yield and reliability with elimination of laser repair and
soft error concerns.


Fujitsu is a leading provider of customer-focused IT and
communications solutions for the global marketplace. Pace-setting
technologies, highly reliable computing and telecommunications
platforms, and a worldwide corps of systems and services experts
uniquely position Fujitsu to deliver comprehensive solutions that open
up infinite possibilities for its customers’ success. Headquartered in
Tokyo, Fujitsu Limited (TSE:6702) reported consolidated revenues of
4.6 trillion yen (US$38 billion) for the fiscal year ended March 31,
2003. For more information, please see:


Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs, while using the same
standard logic manufacturing processes.

1T-SRAM technologies also offer the familiar, refresh-free
interface and high performance for random address access cycles
associated with traditional SRAMs. In addition, these technologies can
reduce operating power consumption by a factor of four compared with
traditional SRAM technology, contributing to making it ideal for
embedding large memories in System on Chip (SoC) designs. MoSys’
licensees have shipped more than 50 million chips incorporating
1T-SRAM embedded memory, demonstrating the excellent manufacturability
of the technology in a wide range of silicon processes and
applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale,
California 94085. More information is available on MoSys’ Web site at

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: MoSys, Inc.
K.T. Boyle, 408-731-1830
Shelton PR
Katie Olivier, 972-239-5119 Ext. 128
Global PR
Press Contact, +81-3-6252-2176
ASIC, Multimedia Marketing Dept.
Customer Contact, +81-3-5322-3323

SOURCE: MoSys, Inc.