SUNNYVALE, Calif.–(BUSINESS WIRE)–Aug. 4, 2003–MoSys, Inc.
(Nasdaq:MOSY) the industry’s leading provider of high density SoC
embedded memory solutions, and eSilicon Corporation, the first fabless
custom chip company to bring all aspects of the design and
manufacturing process together in a single, unified environment, today
announced that eSilicon Corporation is successfully using 1T-SRAM(R)
technology in a new advanced networking chip, resulting in significant
die size reduction and cost benefits.

eSilicon chose MoSys’ 1T-SRAM embedded memory technology for this
networking project because it combines area-efficiency with improved
performance and yield in a technology that is production proven and
cost-effective. This combination of benefits is not available from
other memory technologies.

“MoSys’ 1T-SRAM embedded memory technology delivers significant
advantages in performance and density over other available
technologies that we investigated,” commented Mike Gianfagna, vice
president of Marketing for eSilicon. “A clear trend, noted by
independent industry analysts, is that memory is occupying an
increasing percentage of the die area in any SoC. In this design,
2-Mbit of SRAM accounts for a significant portion of the die size.”

“We are delighted that eSilicon has successfully delivered working
silicon to its customer using our technology, joining the
ever-expanding list of companies choosing MoSys’ 1T-SRAM embedded
memories,” said Mark-Eric Jones, vice president and general manager of
Intellectual Property at MoSys. “As the proportion of SoC die area
occupied by memory continues to grow, the dual benefits of increased
density and yield inherent in our 1T-SRAM technology combine to
deliver dramatic advantages for the whole SoC design, and
consequently, for eSilicon’s customers.”

The advanced networking chip is the first design eSilicon and
MoSys have partnered on and the results have met or exceeded all
targeted specifications. eSilicon is a member of MoSys’ Design
Services Alliance and has additional chips utilizing 1T-SRAM memory
technology in its manufacturing pipeline.

ABOUT eSILICON

eSilicon Corporation is a full-service provider of custom chips to
the world’s leading electronics companies. Founded in 2000, the
company’s unique approach manages every step of the IC development
process — from specification through manufacturing and delivery of
packaged and tested parts. eSilicon offers value-added design and
manufacturing expertise, with an ebusiness infrastructure that
provides significant visibility, predictability and time-to-market
advantages. Headquartered in Sunnyvale, Calif. with offices in
Allentown, Pa., and Murray Hill, N.J., eSilicon has approximately 80
employees. For more information about eSilicon, visit
www.eSilicon.com.

ABOUT MOSYS

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs, while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making it ideal for embedding large memories in System
on Chip (SoC) designs. MoSys’ licensees have shipped more than 50
million chips incorporating 1T-SRAM embedded memory, demonstrating the
excellent manufacturability of the technology in a wide range of
silicon processes and applications. MoSys is headquartered at 1020
Stewart Drive, Sunnyvale, California 94085. More information is
available on MoSys’ Web site at https://dev-mosys-web-04-19.pantheonsite.io/.

Note for Editors:

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.