SUNNYVALE, Calif.–(BUSINESS WIRE)–April 29, 2004–A Delaware
Chancery Court today decided to proceed on an expedited basis with the
lawsuit filed by Monolithic System Technology, Inc., (“MoSys”)
(Nasdaq:MOSY) against Synopsys, Inc. (Nasdaq:SNPS), as requested by
the companies. The lawsuit, filed by MoSys on April 23, 2004, seeks to
compel Synopsys to complete a merger agreement the defendant signed on
Feb. 23, 2004.

“We are pleased that this case will proceed quickly,” said
Fu-Chieh Hsu, Chairman and CEO of MoSys. “All of the reasons that
favored this merger before Synopsys abruptly breached our agreement
still exist, and we hope this will clear the air on any outstanding
issues so that we can complete the transaction.”

Dr. Hsu said that the only appropriate remedy for the damage
caused to MoSys and its shareholders is for Synopsys to complete the
transaction, pursuant to the companies’ merger agreement. MoSys said
it had no choice but to ask the court to compel Synopsys to honor the
agreement.

The MoSys lawsuit says that Synopsys terminated the agreement even
though all terms and conditions had been met and 89 percent of
outstanding MoSys shares had been properly tendered to Synopsys.

The court today scheduled the trial for July 6 to 13. The trial
will focus exclusively on whether MoSys can compel Synopsys to
complete the merger. The court also agreed to the companies’ request
not to consider damages at this time, therefore allowing for a quicker
decision on the status of the merger.

“We hope that Synopsys recognizes its legal obligations under the
agreement they signed so that we may close a merger that is in the
best interests of our shareholders, customers and employees,” Dr. Hsu
said.

About MoSys

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
50 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, Calif., 94085. More information is available on
MoSys’ website at https://dev-mosys-web-04-19.pantheonsite.io.

Forward-Looking Statements

This press release may contain forward-looking statements about
the Company including, without limitation, benefits and performance
expected from use of the Company’s 1T-SRAM technology.

Forward-looking statements are based on certain assumptions and
expectations of future events that are subject to risks and
uncertainties. Actual results and trends may differ materially from
historical results or those projected in any such forward-looking
statements depending on a variety of factors. These factors include,
but are not limited to, customer acceptance of our 1T-SRAM
technologies, the timing and nature of customer requests for our
services under existing license agreements, the timing of customer
acceptance of our work under such agreements, the level of commercial
success of licensees’ products such as the Nintendo GAMECUBE and cell
phone hand sets, ease of manufacturing and yields of devices
incorporating our 1T-SRAM, our ability to enhance the 1T-SRAM
technology or develop new technologies, the level of intellectual
property protection provided by our patents, the vigor and growth of
markets served by our licensees and customers, the impact of the
Company’s recent acquisition of ATMOS Corporation on future operating
results and operations of the Company and other risks identified in
the Company’s most recent annual report on Form 10-K filed with the
Securities and Exchange Commission, as well as other reports that
MoSys files from time to time with the Securities and Exchange
Commission. MoSys undertakes no obligation to update publicly any
forward-looking statement for any reason, except as required by law,
even as new information becomes available or other events occur in the
future.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: MoSys, Sunnyvale
Mark Voll, 408-731-1846
markv@mosys.com
or
Shelton IR
Beverly Twing, 972-239-5119 x126
btwing@sheltongroup.com

SOURCE: Monolithic System Technology, Inc.