SUNNYVALE, Calif., Dec. 4 /PRNewswire-FirstCall/ — MoSys, Inc.
(Nasdaq: MOSY), a leading provider of high-density embedded memory and other
IP solutions, has announced that Mehdi Bathaee resigned from the Company as an
employee and chief operating officer on December 3, 2007. Mr. Bathaee joined
the Company in August 2007 in connection with its acquisition of mixed signal
integrated circuit designs and related assets from Atmel Corporation and a
corporation controlled by Mr. Bathaee, who continued to manage the acquired
business and then was additionally appointed chief operating officer on
October 1, 2007. Pending a complete review of the Company’s operations and
organizational structure, the Company’s new CEO, Len Perham, will assume all
of the responsibilities that had been delegated to the chief operating
officer, and the Company’s vice president of engineering, Hem Hingarh,
temporarily will oversee the mixed signal design domestic and foreign
engineering operations.


Founded in 1991, MoSys (Nasdaq: MOSY), develops, licenses and markets
innovative memory and analog/mixed-signal technologies for semiconductors.
MoSys’ patented 1T-SRAM and 1T-FLASH technologies offer a combination of high
density, low power consumption, high speed and low cost unmatched by other
available memory technologies. 1T-SRAM technologies also offer the familiar,
refresh-free interface and high performance for random address access cycles
associated with traditional SRAMs. In addition, these technologies can reduce
operating power consumption by a factor of four compared with traditional SRAM
technology, making them ideal for embedding large memories in System on Chip
(SoC) designs. MoSys’ licensees have shipped more than 135 million chips
incorporating 1T-SRAM embedded memory technologies, demonstrating excellent
manufacturability in a wide range of silicon processes and applications.
MoSys’ analog/mixed-signal products feature a number of industry firsts,
including the first DVD front end IP to support both Blu-ray (BD) and HD DVD
formats. Using MoSys IP, system vendors can achieve best-in-class
price/performance in markets such as home entertainment and graphics
applications; mobile consumer devices; and networking and storage equipment.
MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California
94085. More information is available on MoSys’ website at

MoSys was founded in 1991, and had its initial public offering in 2001
(Nasdaq: MOSY). The company is headquartered in Sunnyvale, California at 755
N. Mathilda Avenue, Sunnyvale, California 94085. More information is available
on MoSys’ website at

1T-SRAM(R), 1T-FLASH(TM), and GigaCell(TM) are registered trademarks of
MoSys, Inc.

Sally Pedreiro
MoSys, Inc.
Sunnyvale, CA
+1 (408) 731-1832

Beverly Twing
Director, Investor Relations
Shelton Group
+1 (972) 239-5119 x126

SOURCE MoSys, Inc.

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