Ultra-dense embedded 1T-SRAM used to meet needs of communications
applications

SUNNYVALE, CA, and SAN JOSE (January 31, 2000)— Today
MoSys, Inc. and Allayer Communications announced the licensing of
MoSys’ advanced 1T-SRAM embedded memory technology for integration
in Allayer’s advanced data communications products incorporating
high performance, high density embedded memories.

Allayer provides leading edge products for the Ethernet switching
market. Its data communications switches deliver the performance
needed to meet the exponential growth in bandwidth requirements
fueled in large part by the explosive growth in Internet traffic.
OEMs who use Allayer’s latest family of products, for example, can
create network switches without the need for an external router.

“Allayer evaluated and selected MoSys’ 1T-SRAM embedded memory
technology for its unique combination of performance, density and
power capabilities,” said David Wong, Allayer’s director of
marketing. “These 1T-SRAM characteristics are ideally suited
to our communication applications and are not available from other
technologies.”

Allayer’s data communication switches have expanded beyond address
resolution and now include layer 3 routing functions as well. Such
switches require multi-megabit blocks of high performance low latency
memory to handle very high data throughput. By integrating these
memories on chip, Allayer’s data communication switches gain increased
performance at lower cost.

“MoSys is excited to enable Allayer’s continued industry innovation”,
stated Mark-Eric Jones, vice president and general manager of intellectual
property at MoSys, Inc. “With its very fast cycle times and
ultra-dense architecture, MoSys’ 1T-SRAM technology provides Allayer
with the memory performance it needs at the density required for
economic integration.”

ABOUT 1T-SRAM

Available in densities up to 128Mbits, MoSys’ patented 1T-SRAM
technology uses a single transistor cell to achieve its exceptional
density while maintaining the refresh-free interface and low latency
random memory access cycle time associated with traditional six-transistor
SRAM cells. Embedded 1T-SRAM allows designers to get beyond the
density limits of six-transistor SRAMs; it also reduces much of
the circuit complexity and extra cost associated with using embedded
DRAM. 1T-SRAM memories can be fabricated in either pure logic or
embedded memory processes using as little as one ninth of the area
of traditional six-transistor SRAM cores. In addition to the exceptional
performance and density, this technology offers dramatic power consumption
savings by using under a quarter of the power of traditional SRAM
memories. 1T-SRAM technology is volume production proven in millions
of MoSys’ discrete memory devices.

About Allayer Communications

Allayer Communications was founded in 1997 to design, develop,
manufacture and market high-performance silicon solutions for the
global network. The company utilizes a combination of leading edge
architecture, mixed-signal design expertise and multiple silicon
process technologies to offer IC products for the Gigabit Ethernet
and Fast Ethernet communications market. The corporate name — pronounced
“All-layer” — represents the company¹s long-range intention to
provide silicon solutions for all levels of the OSI networking model.

Allayer is backed by over $12.5 million in venture funding from
Greylock, Acer Capital America, VenGlobal Capital. Allayer’s corporate
headquarters is located in San Jose. Sales and consulting engineering
offices are located throughout the world. For further information
about Allayer and its products, please contact: Marketing Communication
Department, Allayer Communications, 107 Bonaventure Drive, San Jose,
CA 95134, phone: 408/570-0888, or visit the corporate Web site at:

http://www.allayer.com.

RoX™ and RoX-II™ are trademarks of Allayer Communications.

ABOUT MOSYS

MoSys, Inc. is the leading semiconductor technology company specializing
in innovative, high performance, random access memories based on
its patented 1T-SRAM architecture. Founded in 1991, the company
develops innovative memory technology for licensing to semiconductor
and systems companies. MoSys also uses this technology to produce
its own memory products. The company¹s unique memory architecture
has been proven in the volume production of over 30 million memory
devices. Licensees that are adopting 1T-SRAM technology include
tier one electronics, semiconductor and foundry companies. The company
is headquartered at 1020 Stewart Drive, Sunnyvale, California, 94086.
More information on MoSys is available at http://www.mosys.com.

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Note for Editors:

1T-SRAM is a trademark of MoSys, Inc. All other trademarks or registered
trademarks are the property of their respective owners.