SUNNYVALE, Calif., Feb 19, 2003 (BUSINESS WIRE) — MoSys, Inc. (NASDAQ:MOSY)
the industry’s leading provider of high density SoC embedded memory solutions,
today announced the licensing of its 1T-SRAM(R) embedded memory technology to
Advanced Communication Devices Corporation (ACD) a wholly owned subsidiary of
UTStarcom. ACD will use MoSys’ 1T-SRAM embedded memory technology to incorporate
high performance, high density embedded memory blocks into its EtherLan
broadband switch.

ACD chose MoSys’ 1T-SRAM embedded memory technology because it combines
area-efficiency with performance in a technology that is production proven and
cost-effective. The combination of high-performance and density, which is not
available from other SRAM technologies, is best suited for ACD’s design

“MoSys’ 1T-SRAM embedded memory technology provides us significant advantages in
performance and density over other available technologies that we investigated.
By licensing 1T-SRAM embedded memory, we can effectively meet the needs of our
customers, and enable companies to now bring innovative system products to
market with unprecedented speed and cost-effectiveness,” said Johannes Wang,
vice president of Technology at ACD.

“We are pleased that ACD has joined the growing list of companies choosing
MoSys’ 1T-SRAM technologies,” said Mark-Eric Jones, vice president and general
manager of intellectual property at MoSys. “1T-SRAM technology can substantially
reduce the memory size and improve yields. As the proportion of SoC die area
occupied by memory continues to grow these benefits translate to dramatic
advantages for the whole SoC and, consequently, for ACD and its customers.”


Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative
memory technologies for semiconductors. MoSys’ patented 1T-SRAM technologies
offer a combination of high density, low power consumption, high speed and low
cost unmatched by other available memory technologies. The single transistor bit
cell used in 1T-SRAM memory results in the technology achieving much higher
density than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also offer the
familiar, refresh-free interface and high performance for random address access
cycles associated with traditional SRAMs. In addition, 1T-SRAM technologies can
reduce operating power consumption by a factor of four compared with traditional
SRAM technology, contributing to making it an ideal for embedding large memories
in System on Chip (SoC) designs. MoSys’ licensees have shipped more than 50
million chips incorporating 1T-SRAM embedded memory technologies, demonstrating
excellent manufacturability in a wide range of silicon processes and
applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale,
California 94085. More information is available on MoSys’ website at


UTStarcom designs, manufactures, sells, and installs an integrated suite of
future-ready access network and next-generation switching solutions. The company
enables wireless and wireline operators in fast-growth markets worldwide to
offer voice, data, and Internet access services rapidly and cost effectively by
utilizing existing infrastructure.

UTStarcom’s products provide a seamless migration from wireline to wireless,
from narrowband to broadband, and from circuit-to-packet-based networks by
employing “Next Generation Network Technology Now.”

The company’s customers include public telecommunications service providers that
operate wireless and wireline voice and data networks in rapidly growing
communications markets around the world.

Founded in 1991 and headquartered in Alameda, California, the company
manufactures the majority of its products at its ISO9002 certified facilities
located in China, and maintains sales and customer support sites throughout
Mainland China and in Iselin, NJ; Alameda, CA; Miami, FL; Frankfurt, Germany;
Mexico City, Mexico; Taipei, Taiwan; Tokyo, Japan; Bangkok, Thailand; Hanoi and
Ho Chi Minh City, Vietnam; and New Delhi, India.

Note for Editors:

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark
Office. All other trade, product, or service names referenced in this release
may be trademarks or registered trademarks of their respective holders.