High Density, Ultra-Low Power SRAM Family, Targets Networking
SUNNYVALE, CA, April 19, 1999— MoSys, Inc., today announced
the introduction of a new family of its high bit density SRAM products.
The new SRAM family includes pipelined burst and flow-through SRAM
versions available in both 9-Mbit and 8-Mbit densities. These devices
are targeted at data and telecommunications, as well as digital
signal processing (DSP) applications.
The new 9-Mbit MC803256K36, and 8-Mbit MC803256K32 pipelined burst
SRAMs, as well as 9-Mbit MC804256K36, and 8-Mbit MC804256K32 flow-through
SRAMs feature 256Kx36 and 256Kx32 memory configurations. They utilize
a 3.3V supply for memory core power, 3.3V and 2.5V supplies are
supported for I/O power. The MC803256K36/32 pipelined burst devices
operate at speeds up to 166 MHz, with 4ns clock to data access time.
The MC804256K36/32 flow-through devices operate at speeds up to
100 MHz, with 8.5ns clock to data access time. With 60mA active
current, MoSys’ 9-Mbit SRAMs lead the industry with the lowest power
“MoSys’ SRAM is a breakthrough technology that is prompting
system designers to re-evaluate traditional cost-performance tradeoffs
in memory hierarchy and system architecture,” said Dr. Fu-Chieh
Hsu, MoSys’ CEO. “MoSys now offers a wide range of SRAM devices
that offer the power savings and high bit density advantages of
our highly patented 1T-SRAM® technology.”
Availability and Pricing
The MC803256K36/32 pipelined burst and MC804256K36/32 flow-through
SRAM devices are currently sampling in JEDEC standard 100-pin LQFP
packages. Production quantities will be available in May of 1999.
MoSys is a technology leader, providing customers with innovative
application specific memories. MoSys’ SRAMs are available in 2-,
4- and new 8- and 9-Mbit densities. Future product plans include
higher densities, as well as different interface logic and I/O configurations.
MoSys, Inc. is a semiconductor memory technology company that specializes
in innovative, high performance, random access memories including
products based on its patented 1T-SRAM technology. Founded in 1991,
the Company develops and markets memory integrated circuits as well
as licenses memory technology and cores to semiconductor and systems
companies. The Company is headquartered at 1020 Stewart Drive, Sunnyvale,
California 94086. More information on MoSys is available at https://dev-mosys-web-04-19.pantheonsite.io.
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Note for Editors:
1T-SRAM is a trademark of MoSys, Inc. All other trademarks or registered
trademarks are the property of their respective owners.